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| PD - 96104A IRF7304QPbF HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.090 6 5 Description These HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Top View SO-8 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -4.7 -4.3 -3.4 -17 2.0 0.016 12 -5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. 62.5 Units C/W www.irf.com 1 08/02/10 IRF7304QPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -20 V VGS = 0V, ID = -250A -0.012 V/C Reference to 25C, ID = -1mA 0.090 VGS = -4.5V, ID = -2.2A 0.140 VGS = -2.7V, ID = -1.8A -0.70 V VDS = VGS, ID = -250A 4.0 S VDS = -16V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 22 ID = -2.2A 3.3 nC VDS = -16V 9.0 VGS = -4.5V, See Fig. 6 and 12 8.4 VDD = -10V 26 ID = -2.2A ns 51 RG = 6.0 33 RD = 4.5, See Fig. 10 4.0 6.0 610 310 170 nH pF D Between lead tip and center of die contact VGS = 0V VDS = -15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units 56 71 -2.5 A -17 -1.0 84 110 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -1.8A, VGS = 0V TJ = 25C, IF = -2.2A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. ISD -2.2A, di/dt - 50A/s, VDD V(BR)DSS, TJ 150C www.irf.com 2 IRF7304QPbF 100 -I D , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 1 1 -1.5V -1.5V 20s PULSE WIDTH TJ = 25C A 0.1 1 10 100 0.1 0.01 0.1 0.01 20s PULSE WIDTH TJ = 150C 0.1 1 10 100 A -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -3.6A -ID , Drain-to-Source Current (A) TJ = 25C 10 TJ = 150C 1.5 1.0 1 0.5 0.1 1.5 2.0 2.5 3.0 VDS = -15V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7304QPbF 1500 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -2.2A VDS = -16V 8 C, Capacitance (pF) Ciss 1000 Coss Crss 500 6 4 2 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 12 15 20 25 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150C TJ = 25C -ID , Drain Current (A) I 10 1ms 1 0.1 0.3 0.6 0.9 1.2 VGS = 0V A 1.5 1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRF7304QPbF V DS 5.0 RD V GS RG D.U.T. + 4.0 -ID , Drain Current (A) -4.5 V Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 1.0 0.0 25 50 TC , Case Temperature ( C) 75 100 125 150 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - V DD 5 IRF7304QPbF Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS QGD VGS -3mA VG IG ID Charge Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit www.irf.com + -4.5 V D.U.T. - VDS 6 IRF7304QPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by R G * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - V DD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 IRF7304QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES: 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSF ET ) DAT E CODE (YWW) P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ INT ERNATIONAL RECTIFIER LOGO XXXX F7101 www.irf.com 8 IRF7304QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 www.irf.com 9 |
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